Threshold Voltage Fluctuation in N-mos Due to Trap Position and Doping Profile
نویسندگان
چکیده
In this paper , the threshold variation due to modification in doping profile and random trap position has been analysed. This analysis has been done on N-MOS with 40 nm channel length and 32 nm effective channel length . The trap position is changing from drain end to source end and results were observed for different doping profiles .The results shows that the fluctuation in VThreshold is not consistent and the standard deviation are dependent on the trap position as well as on the nature of doping profile. As the Gaussian doping profile shows less fluctuation in comparison of Error function doping profile. The threshold voltage standard deviation is highly correlated when the trap is located in between the centre.
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